Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state

Ślebarski, A., Szot, K., Gamza, Monika orcid iconORCID: 0000-0003-3360-4006, Penkalla, H. J. and Breuer, U. (2005) Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state. Physical Review B, 72 (8). 085443. ISSN 1098-0121

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Official URL: http://dx.doi.org/10.1103/PhysRevB.72.085443

Abstract

Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-sized grains consisting of crystalline components. The grains are separated by a grain boundary. The high-resolution electron microscopy and secondary-ion mass spectrometry were used to determine homogeneity of the grains and the grain boundary. The grains are homogeneous up to about 60% of the major phase, with slightly off-stoichiometric phases constituting the balance, whereas the volume fractions of intercrystalline components are strongly inhomogeneous and off stoichiometric. We argue that there is possibly a ballistic transport of electrons through an interface between the grains, which strongly modifies the resistivity of the CeRhSn stoichiometric grains, which is non-Fermi-liquid in character.


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