DC capacitor simulation by the boundary element method

Kirkup, Stephen Martin orcid iconORCID: 0000-0002-9680-7778 (2007) DC capacitor simulation by the boundary element method. Communications in Numerical Methods in Engineering, 23 (9). pp. 855-869. ISSN 10698299

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Official URL: http://dx.doi.org/10.1002/cnm.929

Abstract

When the direct current (DC) metallized thin film capacitor is fully charged the electromagnetic fields can be considered to have reached a steady state in which the governing equation is Laplace's equation. It is the computational analysis of the electrostatic state that is considered in this paper.

The capacitor is modelled as a stack made up of infinitesimally thin layers of metal on polymer. An integral equation method from the BEMLAP package (www.boundary-element-method.com (Introduction to the Boundary Element Method for Scientists and Engineers: The BEMLAP Fortran Library for Laplace Problems)) for modelling the electric field, based on the methods described in Kirkup (Fortran codes for computing the discrete Helmholtz integral operators; Adv. Comput. Math. 1998; 9:391–409). The method is applied to a typical capacitor structure and encouraging results are obtained


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