Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Cheetham, K. J., Krier, A., Patel, I. I., Martin, Francis L orcid iconORCID: 0000-0001-8562-4944, Tzeng, J-S, Wu, C-J, Lin, H-H and for KJC (Funder), EPSRC Studentship (2011) Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D: Applied Physics, 44 (8). 085405. ISSN 0022-3727

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Official URL: http://dx.doi.org/10.1088/0022-3727/44/8/085405

Abstract

The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.


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