Study on switching behavior of silicon carbide MOSFET by gate driver

Abstract

Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and additional parameters were found to have significant impacts on SiC MOSFET switching behavior. The results are analysed after combination and comparison.