Design of bipolar pulsed neurostimulator based on MOS transistors

Gan, Yilin (2023) Design of bipolar pulsed neurostimulator based on MOS transistors. In: 2023 IEEE International Conference on Image Processing and Computer Applications (ICIPCA). IEEE, pp. 1880-1884. ISBN 979-8-3503-1467-0

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Official URL: https://doi.org/10.1109/ICIPCA59209.2023.10257898

Abstract

As diseases of the nervous system become more and more frequent, the research on instruments such as nerve stimulation is becoming more and more important. In this paper, the design of a neural stimulator based on MOS transistors is investigated. The basic principles of MOS transistor and neural stimulator are described in this paper. The structure, type, and application of different neurostimulator are described. The circuit of bipolar pulse neural stimulator based on MOS transistors is designed and analyzed. There is no doubt that through the research and explanation of this paper, more people will understand the neural stimulator, which is of great significance to the popularization and research of neural stimulator.


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