Comparing third-generation wide bandgap semiconductor devices SiC MOSFET and GaN HEMT

Abstract

Third-generation wide-bandgap semiconductor materials feature a wide bandgap, excellent breakdown electric field strength, high temperature resistance, and great radiation resistance. They can compensate for the drawbacks of conventional semiconductors and allow equipment to function normally even under severely demanding circumstances. Wide bandgap semiconductor materials therefore have a significant impact on the microelectronics industry. SiC MOSFET and GaN HEMT are examples of third-generation wide-bandgap semiconductor materials. The SiC MOSFET and GaN HEMT properties and uses are the focus of this essay. First, the internal structure, iv curve, threshold voltage, transconductance, and device characteristics of the respective SiC MOSFET and GaN HEMT are introduced. Then the two were compared for their electrical properties. Finally, by contrasting the application situations according to various features, it is possible to determine the various benefits and drawbacks of SiC MOSFET and GaN HEMT. The issues with materials and processes involved in creating wide bandgap semiconductor devices will be gradually resolved over time. In the future application field, it is crucial to select the appropriate device according to different advantages.